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| 2SK2203 Silicon N-Channel MOS FET ADE-208-139 1st. Edition Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2203 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25 C 3. Value at Tch = 25 C, Rg 50 Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 60 20 50 200 50 50 214 60 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* Tch Tstg 2 2SK2203 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 20 -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 40 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.007 0.009 65 8330 3500 550 50 270 1400 560 0.95 150 Max -- -- 10 250 2.25 0.01 0.013 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF / dt = 50 A / s Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 25 A VGS = 10 V*1 I D = 25 A VGS = 4 V*1 I D = 25 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.2 Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK2203 Power vs. Temperature Derating 80 Pch (W) I D (A) 1000 Maximum Safe Operation Area 300 100 PW 60 Channel Dissipation Drain Current 40 30 10 3 1 DC =1 10 s 10 0 s 1m s 0m s( 1s Op 20 Operation in on this area is (T c= limited by R DS(on) 2 er ati ho t) 5 C) Ta = 25 C 1 10 20 2 5 50 100 Drain to Source Voltage V DS (V) 0 50 100 150 Tc (C) 200 Case Temperature Typical Output Characteristics 100 10 V 6V 4V 3.5 V 60 3V ID 30 (A) 50 Typical Transfer Characteristics V DS = 10 V Pulse Test -25 C Tc = 25 C 75 C I D (A) 80 40 Drain Current 40 VGS = 2.5 V 20 Pulse Test 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) Drain Current 20 10 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 2SK2203 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Drain to Source On State Resistance R DS(on) ( ) 1.0 Pulse Test 0.8 Static Drain to Source State Resistance vs. Drain Current 0.05 Pulse Test 0.02 0.01 4V VGS = 10 V Drain to Source Voltage 0.6 I D = 50 A 0.005 0.4 0.002 0.001 0.2 20 A 10 A 0.0005 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 1 3 10 30 100 300 Drain Current I D (A) 1000 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test 0.04 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 0.05 Forward Transfer Admittance vs. Drain Current 100 30 10 75 C 3 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 -25 C Tc = 25 C 0.03 0.02 V GS = 4 V 0.01 0 -40 10 V I D = 50 A 10 A 20 A 50 A 10 A 20 A 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 5 2SK2203 Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 100000 200 100 50 Capacitance C (pF) 10000 Ciss Coss 1000 20 10 5 0.1 di / dt = 50 A / s V GS = 0, Ta = 25 C Crss VGS = 0 f = 1 MHz 100 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 VGS V DD = 10 V 25 V 50 V VDS 40 I D = 50 A 8 20 Switching Characteristics 5000 2000 1000 500 200 100 50 0.1 0.3 tf V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % t d(off) 80 16 Drain to Source Voltage 60 12 Gate to Source Voltage Switching Time t (ns) tr t d(on) 1 3 Drain Current 10 30 I D (A) 100 20 V DD = 10 V 25 V 50 V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 0 6 2SK2203 Reverse Drain Current vs. Souece to Drain Voltage Reverse Drain Current I DR (A) Pulse Test 80 10 V 60 5V 40 V GS = 0, -5 V Repetive Avalanche Energy E AR (mJ) 100 250 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 Maximun Avalanche Energy vs. Channel Temperature Derating 200 150 100 20 50 0 25 0 0.4 0.8 1.2 1.6 2.0 50 75 100 125 150 Drain to Source Voltage V DS (V) Channel Temperature Tch (C) Avalanche Test Circuit and Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V (BR)DSS I AP Rg Vin -15 V D. U. T VDD ID 50 0 VDD V DS V DS Monitor L I AP Monitor EAR = 7 2SK2203 Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM PW 1 D = PW T TC = 25C 1.0 0.05 0.02 0.01 se Pul hot 1S 100 1m 10 m Pulse Width PW (s) 0.03 0.01 10 T 100 m 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 Unit: mm 5.0 0.3 15.6 0.3 3.2 + 0.4 - 0.2 5.5 0.3 2.7 1.0 0.2 5.45 0.5 5.45 0.5 21.0 0.5 4.0 2.6 1.4 Max 5.0 19.9 0.3 3.2 1.6 1.4 Max 0.6 0.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PFM -- -- 5.6 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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